FDB14AN06LA0-F085 - MOSFET N-CH 60V 67A D2PAK

Fabricant Nimewo Pati

FDB14AN06LA0-F085

Entèn Nimewo Pati

AX-FDB14AN06LA0-F085

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 67A D2PAK

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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412075 Pieces

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~~USD 0.680844~~

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Espesifikasyon pou FDB14AN06LA0-F085

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Nimewo pati : FDB14AN06LA0-F085

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 67A D2PAK

Seri : Automotive, AEC-Q101, PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 67A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 11.6 mOhm @ 67A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263AB

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB14 , FDB14AN0

dokiman pou FDB14AN06LA0-F085

Fich : FDB14AN06LA0-F085.pdf

pwodwi ki gen rapò pou FDB14AN06LA0-F085 ON Semiconductor

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