IRF7526D1PBF - MOSFET P-CH 30V 2A MICRO8
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-IRF7526D1PBF
Fabricant
Kout Deskripsyon
MOSFET P-CH 30V 2A MICRO8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
66000 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IRF7526D1PBF nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IRF7526D1PBF
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IRF7526D1PBF
Fabricant :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 2A MICRO8
Seri :
FETKY™
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
200 mOhm @ 1.2A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
180pF @ 25V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.25W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro8™
Pake / Ka :
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IRF7526D1PBF
Fich :
IRF7526D1PBF.pdf
pwodwi ki gen rapò pou IRF7526D1PBF Infineon Technologies
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