SI4447DY-T1-GE3 - MOSFET P-CH 40V 3.3A 8-SOIC

Fabricant Nimewo Pati

SI4447DY-T1-GE3

Entèn Nimewo Pati

AX-SI4447DY-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 40V 3.3A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1313680 Pieces

referans pri

~~USD 0.21357~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI4447DY-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI4447DY-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI4447DY-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 40V 3.3A 8-SOIC

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 15V, 10V

RD sou (Max) @ Id, Vgs : 72 mOhm @ 4.5A, 15V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 4.5V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 805pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI444 , SI4447D

dokiman pou SI4447DY-T1-GE3

Fich : SI4447DY-T1-GE3.pdf

pwodwi ki gen rapò pou SI4447DY-T1-GE3 Vishay Siliconix

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