W979H2KBVX2E - IC DRAM 512M PARALLEL 134VFBGA
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-W979H2KBVX2E
Fabricant
Kout Deskripsyon
IC DRAM 512M PARALLEL 134VFBGA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
130120 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen W979H2KBVX2E nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou W979H2KBVX2E
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : W979H2KBVX2E
Fabricant : Winbond Electronics
Deskripsyon : IC DRAM 512M PARALLEL 134VFBGA
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - Mobile LPDDR2
Size memwa : 512Mb (16M x 32)
Frè frekans lan : 400MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : -
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.14V ~ 1.95V
Operating Tanperati : -25°C ~ 85°C (TC)
Mounting Kalite : Surface Mount
Pake / Ka : 134-VFBGA
Pake Aparèy Founisè : 134-VFBGA (10x11.5)
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou W979H2KBVX2E
Fich : W979H2KBVX2E.pdf
pwodwi ki gen rapò pou W979H2KBVX2E Winbond Electronics
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