SQM120P10_10M1LGE3 - MOSFET P-CH 100V 120A TO263

Fabricant Nimewo Pati

SQM120P10_10M1LGE3

Entèn Nimewo Pati

AX-SQM120P10_10M1LGE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 100V 120A TO263

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

223725 Pieces

referans pri

~~USD 1.25403~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQM120P10_10M1LGE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou SQM120P10_10M1LGE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQM120P10_10M1LGE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 100V 120A TO263

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 10.1 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 190nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 9000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 375W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263 (D²Pak)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQM120 , SQM120P10

dokiman pou SQM120P10_10M1LGE3

Fich : SQM120P10_10M1LGE3.pdf

pwodwi ki gen rapò pou SQM120P10_10M1LGE3 Vishay Siliconix

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