DMN1017UCP3-7 - MOSFET N-CH 12V 7.5A X3-DSN1010

Fabricant Nimewo Pati

DMN1017UCP3-7

Entèn Nimewo Pati

AX-DMN1017UCP3-7

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET N-CH 12V 7.5A X3-DSN1010

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1963660 Pieces

referans pri

~~USD 0.142878~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMN1017UCP3-7 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMN1017UCP3-7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMN1017UCP3-7

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET N-CH 12V 7.5A X3-DSN1010

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 3.3V

RD sou (Max) @ Id, Vgs : 17 mOhm @ 5A, 3.3V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 3.3V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 1503pF @ 6V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.47W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : X3-DSN1010-3

Pake / Ka : 3-XDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMN1 , DMN101

dokiman pou DMN1017UCP3-7

Fich : DMN1017UCP3-7.pdf

pwodwi ki gen rapò pou DMN1017UCP3-7 Diodes Incorporated

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