IRFHM792TRPBF - MOSFET 2N-CH 100V 2.3A 8PQFN
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 100V 2.3A 8PQFN
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
504785 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IRFHM792TRPBF nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IRFHM792TRPBF
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IRFHM792TRPBF
Fabricant :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 100V 2.3A 8PQFN
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A
RD sou (Max) @ Id, Vgs :
195 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 10µA
Chaje Gate (Qg) (Max) @ Vgs :
6.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
251pF @ 25V
Pouvwa - Max :
2.3W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
8-PQFN (3.3x3.3), Power33
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IRFHM792TRPBF
Fich :
IRFHM792TRPBF.pdf
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