EGP31B-E3/C - DIODE GEN PURP 100V 3A DO201AD

Fabricant Nimewo Pati

EGP31B-E3/C

Entèn Nimewo Pati

AX-EGP31B-E3/C

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 3A DO201AD

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1237050 Pieces

referans pri

~~USD 0.2268~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EGP31B-E3/C nan stock pou vann.

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Espesifikasyon pou EGP31B-E3/C

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EGP31B-E3/C

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 3A DO201AD

Seri : SUPERECTIFIER®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 3A

Voltage - Forward (Vf) (Max) @ Si : 950mV @ 3A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 1µA @ 100V

Kapasite @ Vr, F : 117pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : DO-201AD, Axial

Pake Aparèy Founisè : DO-201AD

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EGP , EGP31

dokiman pou EGP31B-E3/C

Fich : EGP31B-E3/C.pdf

pwodwi ki gen rapò pou EGP31B-E3/C Vishay Semiconductor Diodes Division

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