ALD1110EPAL - MOSFET 2N-CH 10V 8DIP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 2N-CH 10V 8DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
71950 Pieces
referans pri
USD 3.89916
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ALD1110EPAL nan stock pou vann.
D 'opsyon ak anbake tan:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou ALD1110EPAL

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : ALD1110EPAL
Fabricant : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10V 8DIP
Seri : EPAD®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 10V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
RD sou (Max) @ Id, Vgs : 500 Ohm @ 5V
Vgs (th) (Max) @ Id : 1.01V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V
Pouvwa - Max : 600mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-PDIP
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : ALD , ALD11

dokiman pou ALD1110EPAL

pwodwi ki gen rapò pou ALD1110EPAL Advanced Linear Devices Inc.

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