ALD1110EPAL - MOSFET 2N-CH 10V 8DIP
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-ALD1110EPAL
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 10V 8DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
71950 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen ALD1110EPAL nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou ALD1110EPAL
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
ALD1110EPAL
Fabricant :
Advanced Linear Devices Inc.
Deskripsyon :
MOSFET 2N-CH 10V 8DIP
Seri :
EPAD®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Matched Pair
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
10V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
500 Ohm @ 5V
Vgs (th) (Max) @ Id :
1.01V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
2.5pF @ 5V
Pouvwa - Max :
600mW
Operating Tanperati :
0°C ~ 70°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-PDIP
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou ALD1110EPAL
Fich :
ALD1110EPAL.pdf
pwodwi ki gen rapò pou ALD1110EPAL Advanced Linear Devices Inc.
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