ALD1110EPAL - MOSFET 2N-CH 10V 8DIP

Fabricant Nimewo Pati

ALD1110EPAL

Entèn Nimewo Pati

AX-ALD1110EPAL

Fabricant

Advanced Linear Devices Inc.

Kout Deskripsyon

MOSFET 2N-CH 10V 8DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

71950 Pieces

referans pri

~~USD 3.89916~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ALD1110EPAL nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou ALD1110EPAL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ALD1110EPAL

Fabricant : Advanced Linear Devices Inc.

Deskripsyon : MOSFET 2N-CH 10V 8DIP

Seri : EPAD®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Matched Pair

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 10V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : -

RD sou (Max) @ Id, Vgs : 500 Ohm @ 5V

Vgs (th) (Max) @ Id : 1.01V @ 1µA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V

Pouvwa - Max : 600mW

Operating Tanperati : 0°C ~ 70°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : 8-DIP (0.300", 7.62mm)

Pake Aparèy Founisè : 8-PDIP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ALD , ALD11

dokiman pou ALD1110EPAL

Fich : ALD1110EPAL.pdf

pwodwi ki gen rapò pou ALD1110EPAL Advanced Linear Devices Inc.

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