SIA913DJ-T1-GE3 - MOSFET 2P-CH 12V 4.5A SC70-6
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2P-CH 12V 4.5A SC70-6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
27300 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SIA913DJ-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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Espesifikasyon pou SIA913DJ-T1-GE3
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SIA913DJ-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 12V 4.5A SC70-6
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A
RD sou (Max) @ Id, Vgs : 70 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 6V
Pouvwa - Max : 6.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SC-70-6 Dual
Pake Aparèy Founisè : PowerPAK® SC-70-6 Dual
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou SIA913DJ-T1-GE3
Fich : SIA913DJ-T1-GE3.pdf
pwodwi ki gen rapò pou SIA913DJ-T1-GE3 Vishay Siliconix
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