HGT1S12N60A4S9A - IGBT 600V 54A 167W TO263AB

Fabricant Nimewo Pati

HGT1S12N60A4S9A

Entèn Nimewo Pati

AX-HGT1S12N60A4S9A

Fabricant

ON Semiconductor

Kout Deskripsyon

IGBT 600V 54A 167W TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

56526 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HGT1S12N60A4S9A nan stock pou vann.

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Espesifikasyon pou HGT1S12N60A4S9A

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HGT1S12N60A4S9A

Fabricant : ON Semiconductor

Deskripsyon : IGBT 600V 54A 167W TO263AB

Seri : -

Estati Pati : Obsolete

Kalite IGBT : -

Voltage - Pèseptè ki emèt deba (Max) : 600V

Kouran - Pèseptè (Ic) (Max) : 54A

Kouran - Pèseptè batman (Icm) : 96A

Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 12A

Pouvwa - Max : 167W

Oblije chanje enèji : 55µJ (on), 50µJ (off)

Kalite Antre : Standard

Gate chaje : 78nC

Td (on / off) @ 25 ° C : 17ns/96ns

Kondisyon egzamen an : 390V, 12A, 10 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HGT1S , HGT1S12

dokiman pou HGT1S12N60A4S9A

Fich : HGT1S12N60A4S9A.pdf

pwodwi ki gen rapò pou HGT1S12N60A4S9A ON Semiconductor

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