FESB16JT-E3/81 - DIODE GEN PURP 600V 16A TO263AB
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE GEN PURP 600V 16A TO263AB
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Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
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467740 Pieces
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Espesifikasyon pou FESB16JT-E3/81
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FESB16JT-E3/81
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 16A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 16A
Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 16A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 145pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -65°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou FESB16JT-E3/81
Fich : FESB16JT-E3/81.pdf
pwodwi ki gen rapò pou FESB16JT-E3/81 Vishay Semiconductor Diodes Division
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