FDFMA3N109 - MOSFET N-CH 30V 2.9A MICRO2X2

Fabricant Nimewo Pati

FDFMA3N109

Entèn Nimewo Pati

AX-FDFMA3N109

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 2.9A MICRO2X2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1482160 Pieces

referans pri

~~USD 0.189294~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDFMA3N109 nan stock pou vann.

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Espesifikasyon pou FDFMA3N109

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDFMA3N109

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 30V 2.9A MICRO2X2

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 123 mOhm @ 2.9A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 3nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 220pF @ 15V

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 1.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-MicroFET (2x2)

Pake / Ka : 6-VDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDF , FDFMA

dokiman pou FDFMA3N109

Fich : FDFMA3N109.pdf

pwodwi ki gen rapò pou FDFMA3N109 ON Semiconductor

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