DMN2011UFDE-13 - MOSFET N-CH 20V 11.7A SOT323

Fabricant Nimewo Pati

DMN2011UFDE-13

Entèn Nimewo Pati

AX-DMN2011UFDE-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET N-CH 20V 11.7A SOT323

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1821390 Pieces

referans pri

~~USD 0.154038~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMN2011UFDE-13 nan stock pou vann.

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Espesifikasyon pou DMN2011UFDE-13

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMN2011UFDE-13

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET N-CH 20V 11.7A SOT323

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 9.5 mOhm @ 7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 84nC @ 10V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 3372pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 610mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : U-DFN2020-6 (Type E)

Pake / Ka : 6-UDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMN2 , DMN2011

dokiman pou DMN2011UFDE-13

Fich : DMN2011UFDE-13.pdf

pwodwi ki gen rapò pou DMN2011UFDE-13 Diodes Incorporated

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