IRLD110PBF - MOSFET N-CH 100V 1A 4-DIP

Fabricant Nimewo Pati

IRLD110PBF

Entèn Nimewo Pati

AX-IRLD110PBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 100V 1A 4-DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

437010 Pieces

referans pri

~~USD 0.642~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRLD110PBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRLD110PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRLD110PBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 100V 1A 4-DIP

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 5V

RD sou (Max) @ Id, Vgs : 540 mOhm @ 600mA, 5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 6.1nC @ 5V

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : 250pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.3W (Ta)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP

Pake / Ka : 4-DIP (0.300", 7.62mm)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRL , IRLD1

dokiman pou IRLD110PBF

Fich : IRLD110PBF.pdf

pwodwi ki gen rapò pou IRLD110PBF Vishay Siliconix

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