RGT8NS65DGTL - IGBT 650V 8A 65W TO-263S

Fabricant Nimewo Pati

RGT8NS65DGTL

Entèn Nimewo Pati

AX-RGT8NS65DGTL

Fabricant

Rohm Semiconductor

Kout Deskripsyon

IGBT 650V 8A 65W TO-263S

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

833965 Pieces

referans pri

~~USD 0.33642~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RGT8NS65DGTL nan stock pou vann.

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Espesifikasyon pou RGT8NS65DGTL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RGT8NS65DGTL

Fabricant : Rohm Semiconductor

Deskripsyon : IGBT 650V 8A 65W TO-263S

Seri : -

Estati Pati : Active

Kalite IGBT : Trench Field Stop

Voltage - Pèseptè ki emèt deba (Max) : 650V

Kouran - Pèseptè (Ic) (Max) : 8A

Kouran - Pèseptè batman (Icm) : 12A

Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 4A

Pouvwa - Max : 65W

Oblije chanje enèji : -

Kalite Antre : Standard

Gate chaje : 13.5nC

Td (on / off) @ 25 ° C : 17ns/69ns

Kondisyon egzamen an : 400V, 4A, 50 Ohm, 15V

Ranvèse Tan Reverse (trr) : 40ns

Operating Tanperati : -40°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : LPDS (TO-263S)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RGT8 , RGT8NS

dokiman pou RGT8NS65DGTL

Fich : RGT8NS65DGTL.pdf

pwodwi ki gen rapò pou RGT8NS65DGTL Rohm Semiconductor

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