BSP149 E6327 - MOSFET N-CH 200V 660MA SOT-223

Fabricant Nimewo Pati

BSP149 E6327

Entèn Nimewo Pati

AX-BSP149 E6327

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 200V 660MA SOT-223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9016 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSP149 E6327 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSP149 E6327

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSP149 E6327

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 200V 660MA SOT-223

Seri : SIPMOS®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 660mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 0V, 10V

RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 660mA, 10V

Vgs (th) (Max) @ Id : 1V @ 400µA

Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 430pF @ 25V

Karakteristik FET : Depletion Mode

Disipasyon Pouvwa (Max) : 1.8W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT223-4

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSP1 , BSP149

dokiman pou BSP149 E6327

Fich : BSP149 E6327.pdf

pwodwi ki gen rapò pou BSP149 E6327 Infineon Technologies

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