NDS8961 - MOSFET 2N-CH 30V 3.1A 8-SOIC

Fabricant Nimewo Pati

NDS8961

Entèn Nimewo Pati

AX-NDS8961

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH 30V 3.1A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

26607 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NDS8961

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NDS8961

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH 30V 3.1A 8-SOIC

Seri : -

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.1A

RD sou (Max) @ Id, Vgs : 100 mOhm @ 3.1A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 190pF @ 15V

Pouvwa - Max : 900mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ND , NDS

dokiman pou NDS8961

Fich : NDS8961.pdf

pwodwi ki gen rapò pou NDS8961 ON Semiconductor

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