IXTA6N100D2 - MOSFET N-CH 1000V 6A D2PAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 1000V 6A D2PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
76650 Pieces
referans pri
USD 3.66
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXTA6N100D2 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IXTA6N100D2

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IXTA6N100D2
Fabricant : IXYS
Deskripsyon : MOSFET N-CH 1000V 6A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 2.2 Ohm @ 3A, 0V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 95nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2650pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IXT , IXTA6

dokiman pou IXTA6N100D2

pwodwi ki gen rapò pou IXTA6N100D2 IXYS

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