IPB025N10N3GE8187ATMA1 - MOSFET N-CH 100V 180A TO263-7
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 100V 180A TO263-7
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
143225 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IPB025N10N3GE8187ATMA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IPB025N10N3GE8187ATMA1
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IPB025N10N3GE8187ATMA1
Fabricant :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 180A TO263-7
Seri :
OptiMOS™
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 275µA
Chaje Gate (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
14800pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-7
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)
Pwa :
-
kondisyon :
Nouvo ak orijinal
Lyen ki gen rapò :
IPB025N , IPB025N10N3
dokiman pou IPB025N10N3GE8187ATMA1
Fich :
IPB025N10N3GE8187ATMA1.pdf
pwodwi ki gen rapò pou IPB025N10N3GE8187ATMA1 Infineon Technologies
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