FDI8441 - MOSFET N-CH 40V 80A TO-262AB

Fabricant Nimewo Pati

FDI8441

Entèn Nimewo Pati

AX-FDI8441

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 40V 80A TO-262AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou FDI8441

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDI8441

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 40V 80A TO-262AB

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Ta), 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.7 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 280nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 15000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK (TO-262)

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDI

dokiman pou FDI8441

Fich : FDI8441.pdf

pwodwi ki gen rapò pou FDI8441 ON Semiconductor

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