SI3459DV-T1-E3 - MOSFET P-CH 60V 2.2A 6-TSOP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 60V 2.2A 6-TSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
52410 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI3459DV-T1-E3 nan stock pou vann.
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou SI3459DV-T1-E3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI3459DV-T1-E3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 60V 2.2A 6-TSOP
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 220 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-TSOP
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI34 , SI3459D

dokiman pou SI3459DV-T1-E3

pwodwi ki gen rapò pou SI3459DV-T1-E3 Vishay Siliconix

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