US1AHE3_A/I - DIODE GEN PURP 50V 1A DO214AC

Fabricant Nimewo Pati

US1AHE3_A/I

Entèn Nimewo Pati

AX-US1AHE3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 50V 1A DO214AC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4166875 Pieces

referans pri

~~USD 0.067332~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen US1AHE3_A/I nan stock pou vann.

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Espesifikasyon pou US1AHE3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : US1AHE3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 50V 1A DO214AC

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 50V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 10µA @ 50V

Kapasite @ Vr, F : 15pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-214AC, SMA

Pake Aparèy Founisè : DO-214AC (SMA)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : US1 , US1AH

dokiman pou US1AHE3_A/I

Fich : US1AHE3_A/I.pdf

pwodwi ki gen rapò pou US1AHE3_A/I Vishay Semiconductor Diodes Division

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