MBR60030CTRL - DIODE SCHOTTKY 30V 300A 2 TOWER

Fabricant Nimewo Pati

MBR60030CTRL

Entèn Nimewo Pati

AX-MBR60030CTRL

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 30V 300A 2 TOWER

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

37842 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBR60030CTRL nan stock pou vann.

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Espesifikasyon pou MBR60030CTRL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MBR60030CTRL

Fabricant : GeneSiC Semiconductor

Deskripsyon : DIODE SCHOTTKY 30V 300A 2 TOWER

Seri : -

Estati Pati : Obsolete

Konfigirasyon dyòd : 1 Pair Common Anode

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 30V

Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 300A

Voltage - Forward (Vf) (Max) @ Si : 580mV @ 300A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 3mA @ 30V

Operating Tanperati - Junction : -55°C ~ 150°C

Mounting Kalite : Chassis Mount

Pake / Ka : Twin Tower

Pake Aparèy Founisè : Twin Tower

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MBR6 , MBR600

dokiman pou MBR60030CTRL

Fich : MBR60030CTRL.pdf

pwodwi ki gen rapò pou MBR60030CTRL GeneSiC Semiconductor

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