SI1489EDH-T1-GE3 - MOSFET P-CH 8V 2A SOT-363

Fabricant Nimewo Pati

SI1489EDH-T1-GE3

Entèn Nimewo Pati

AX-SI1489EDH-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 8V 2A SOT-363

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52770 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI1489EDH-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI1489EDH-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1489EDH-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 8V 2A SOT-363

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 8V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V

RD sou (Max) @ Id, Vgs : 48 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 700mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 4.5V

Vgs (Max) : ±5V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.56W (Ta), 2.8W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-363

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI148 , SI1489ED

dokiman pou SI1489EDH-T1-GE3

Fich : SI1489EDH-T1-GE3.pdf

pwodwi ki gen rapò pou SI1489EDH-T1-GE3 Vishay Siliconix

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