BYM11-800HE3_A/I - DIODE GEN PURP 800V 1A DO213AB

Fabricant Nimewo Pati

BYM11-800HE3_A/I

Entèn Nimewo Pati

AX-BYM11-800HE3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 800V 1A DO213AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3885385 Pieces

referans pri

~~USD 0.07221~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BYM11-800HE3_A/I nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BYM11-800HE3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BYM11-800HE3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 800V 1A DO213AB

Seri : Automotive, AEC-Q101, Superectifier®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 500ns

Kouran - Fèy Reverse @ Vr : 5µA @ 800V

Kapasite @ Vr, F : 15pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-213AB, MELF (Glass)

Pake Aparèy Founisè : DO-213AB

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BYM11 , BYM11-80

dokiman pou BYM11-800HE3_A/I

Fich : BYM11-800HE3_A/I.pdf

pwodwi ki gen rapò pou BYM11-800HE3_A/I Vishay Semiconductor Diodes Division

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