CDBGBSC20650-G - DIODE DUAL SILICON CARBIDE POWER
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE DUAL SILICON CARBIDE POWER
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
91375 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen CDBGBSC20650-G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou CDBGBSC20650-G
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
CDBGBSC20650-G
Fabricant :
Comchip Technology
Deskripsyon :
DIODE DUAL SILICON CARBIDE POWER
Seri :
-
Estati Pati :
Active
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
33A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
100µA @ 650V
Operating Tanperati - Junction :
-55°C ~ 175°C
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou CDBGBSC20650-G
Fich :
CDBGBSC20650-G.pdf
pwodwi ki gen rapò pou CDBGBSC20650-G Comchip Technology
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