SIA777EDJ-T1-GE3 - MOSFET N/P-CH 20V/12V SC70-6L

Fabricant Nimewo Pati

SIA777EDJ-T1-GE3

Entèn Nimewo Pati

AX-SIA777EDJ-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N/P-CH 20V/12V SC70-6L

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2031480 Pieces

referans pri

~~USD 0.138108~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIA777EDJ-T1-GE3 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIA777EDJ-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIA777EDJ-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N/P-CH 20V/12V SC70-6L

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N and P-Channel

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V, 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A, 4.5A

RD sou (Max) @ Id, Vgs : 225 mOhm @ 1.6A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 2.2nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 5W, 7.8W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® SC-70-6 Dual

Pake Aparèy Founisè : PowerPAK® SC-70-6 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIA77 , SIA777ED

dokiman pou SIA777EDJ-T1-GE3

Fich : SIA777EDJ-T1-GE3.pdf

pwodwi ki gen rapò pou SIA777EDJ-T1-GE3 Vishay Siliconix

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