APT10M09B2VFRG - MOSFET N-CH 100V 100A T-MAX

Fabricant Nimewo Pati

APT10M09B2VFRG

Entèn Nimewo Pati

AX-APT10M09B2VFRG

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 100V 100A T-MAX

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9351 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen APT10M09B2VFRG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APT10M09B2VFRG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APT10M09B2VFRG

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 100V 100A T-MAX

Seri : POWER MOS V®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 4V @ 2.5mA

Chaje Gate (Qg) (Max) @ Vgs : 350nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 9875pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 625W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : T-MAX™ [B2]

Pake / Ka : TO-247-3 Variant

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APT1 , APT10M0

dokiman pou APT10M09B2VFRG

Fich : APT10M09B2VFRG.pdf

pwodwi ki gen rapò pou APT10M09B2VFRG Microsemi Corporation

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