IPB093N04LGATMA1 - MOSFET N-CH 40V 50A TO263-3

Fabricant Nimewo Pati

IPB093N04LGATMA1

Entèn Nimewo Pati

AX-IPB093N04LGATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 40V 50A TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

15688 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB093N04LGATMA1 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPB093N04LGATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB093N04LGATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 40V 50A TO263-3

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 9.3 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2V @ 16µA

Chaje Gate (Qg) (Max) @ Vgs : 28nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2100pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 47W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB09 , IPB093N0

dokiman pou IPB093N04LGATMA1

Fich : IPB093N04LGATMA1.pdf

pwodwi ki gen rapò pou IPB093N04LGATMA1 Infineon Technologies

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