NVMFSW6D1N08HT1G - T8 80V 1 PART PROLIFERATI

Fabricant Nimewo Pati

NVMFSW6D1N08HT1G

Entèn Nimewo Pati

AX-NVMFSW6D1N08HT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

T8 80V 1 PART PROLIFERATI

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

628655 Pieces

referans pri

~~USD 0.446292~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NVMFSW6D1N08HT1G nan stock pou vann.

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Espesifikasyon pou NVMFSW6D1N08HT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NVMFSW6D1N08HT1G

Fabricant : ON Semiconductor

Deskripsyon : T8 80V 1 PART PROLIFERATI

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Ta), 89A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 4V @ 120µA

Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2085pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.8W (Ta), 104W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)

Pake / Ka : 8-PowerTDFN, 5 Leads

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVMFS , NVMFSW6D

dokiman pou NVMFSW6D1N08HT1G

Fich : NVMFSW6D1N08HT1G.pdf

pwodwi ki gen rapò pou NVMFSW6D1N08HT1G ON Semiconductor

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