FF6MR12W2M1B11BOMA1 - MOSFET MODULE 1200V 200A

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET MODULE 1200V 200A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9211 Pieces
referans pri
USD 191.874
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FF6MR12W2M1B11BOMA1 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou FF6MR12W2M1B11BOMA1

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FF6MR12W2M1B11BOMA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET MODULE 1200V 200A
Seri : CoolSiC™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200A (Tj)
RD sou (Max) @ Id, Vgs : 5.63 mOhm @ 200A, 15V
Vgs (th) (Max) @ Id : 5.55V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs : 496nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds : 14700pF @ 800V
Pouvwa - Max : 20mW (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : AG-EASY2BM-2
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FF6MR1 , FF6MR12W2

dokiman pou FF6MR12W2M1B11BOMA1

pwodwi ki gen rapò pou FF6MR12W2M1B11BOMA1 Infineon Technologies

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