NTD12N10-1G - MOSFET N-CH 100V 12A IPAK

Fabricant Nimewo Pati

NTD12N10-1G

Entèn Nimewo Pati

AX-NTD12N10-1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 12A IPAK

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou NTD12N10-1G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTD12N10-1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 12A IPAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 165 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 550pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.28W (Ta), 56.6W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTD , NTD12

dokiman pou NTD12N10-1G

Fich : NTD12N10-1G.pdf

pwodwi ki gen rapò pou NTD12N10-1G ON Semiconductor

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