FQB8N60CTM-WS - MOSFET N-CH 600V 7.5A

Fabricant Nimewo Pati

FQB8N60CTM-WS

Entèn Nimewo Pati

AX-FQB8N60CTM-WS

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 7.5A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52632 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou FQB8N60CTM-WS

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQB8N60CTM-WS

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 7.5A

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.2 Ohm @ 3.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1255pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.13W (Ta), 147W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQB8 , FQB8N6

dokiman pou FQB8N60CTM-WS

Fich : FQB8N60CTM-WS.pdf

pwodwi ki gen rapò pou FQB8N60CTM-WS ON Semiconductor

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