SI5513CDC-T1-GE3 - MOSFET N/P-CH 20V 4A 1206-8
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 20V 4A 1206-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1918935 Pieces
referans pri
pri nou
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- AXE Semiconductor gen SI5513CDC-T1-GE3 nan stock pou vann.
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Espesifikasyon pou SI5513CDC-T1-GE3
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI5513CDC-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N/P-CH 20V 4A 1206-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A, 3.7A
RD sou (Max) @ Id, Vgs : 55 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.2nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 285pF @ 10V
Pouvwa - Max : 3.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SMD, Flat Lead
Pake Aparèy Founisè : 1206-8 ChipFET™
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou SI5513CDC-T1-GE3
Fich : SI5513CDC-T1-GE3.pdf
pwodwi ki gen rapò pou SI5513CDC-T1-GE3 Vishay Siliconix
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|---|---|---|---|
| AVX Corporation | CAP CER 0.022UF 16V X7R AXIAL. | ||
| Vishay Beyschlag | CAP CER 7500PF 22.5KV SCREW. | ||
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| Vishay Beyschlag | CAP CER 7500PF 22.5KV SCREW. | ||
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