FDS8958B_G - MOSFET N/P-CH 30V 6.4A/4.5A 8SO

Fabricant Nimewo Pati

FDS8958B_G

Entèn Nimewo Pati

AX-FDS8958B_G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N/P-CH 30V 6.4A/4.5A 8SO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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28952 Pieces

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pri nou

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Espesifikasyon pou FDS8958B_G

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Nimewo pati : FDS8958B_G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N/P-CH 30V 6.4A/4.5A 8SO

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N and P-Channel

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.4A, 4.5A

RD sou (Max) @ Id, Vgs : 26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.8nC @ 4.5V, 9.6nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 540pF @ 15V, 760pF @ 15V

Pouvwa - Max : 900mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDS , FDS89

dokiman pou FDS8958B_G

Fich : FDS8958B_G.pdf

pwodwi ki gen rapò pou FDS8958B_G ON Semiconductor

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