IRF610STRR - MOSFET N-CH 200V 3.3A D2PAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 200V 3.3A D2PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
63665 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF610STRR nan stock pou vann.
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Espesifikasyon pou IRF610STRR

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRF610STRR
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 200V 3.3A D2PAK
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta), 36W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IRF , IRF61

dokiman pou IRF610STRR

pwodwi ki gen rapò pou IRF610STRR Vishay Siliconix

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