BSC190N12NS3GATMA1 - MOSFET N-CH 120V 44A TDSON-8

Fabricant Nimewo Pati

BSC190N12NS3GATMA1

Entèn Nimewo Pati

AX-BSC190N12NS3GATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 120V 44A TDSON-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

607040 Pieces

referans pri

~~USD 0.46218~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSC190N12NS3GATMA1 nan stock pou vann.

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Espesifikasyon pou BSC190N12NS3GATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSC190N12NS3GATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 120V 44A TDSON-8

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 120V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.6A (Ta), 44A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 19 mOhm @ 39A, 10V

Vgs (th) (Max) @ Id : 4V @ 42µA

Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2300pF @ 60V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 69W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSC190 , BSC190N12

dokiman pou BSC190N12NS3GATMA1

Fich : BSC190N12NS3GATMA1.pdf

pwodwi ki gen rapò pou BSC190N12NS3GATMA1 Infineon Technologies

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