IPB027N10N3GATMA1 - MOSFET N-CH 100V 120A TO263-3

Fabricant Nimewo Pati

IPB027N10N3GATMA1

Entèn Nimewo Pati

AX-IPB027N10N3GATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 120A TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

151595 Pieces

referans pri

~~USD 1.850682~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB027N10N3GATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPB027N10N3GATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB027N10N3GATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 120A TO263-3

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 2.7 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 275µA

Chaje Gate (Qg) (Max) @ Vgs : 206nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 14800pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB02 , IPB027N1

dokiman pou IPB027N10N3GATMA1

Fich : IPB027N10N3GATMA1.pdf

pwodwi ki gen rapò pou IPB027N10N3GATMA1 Infineon Technologies

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