IPG20N04S4L08AATMA1 - MOSFET 2N-CH 8TDSON

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 2N-CH 8TDSON
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
807730 Pieces
referans pri
USD 0.347346
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPG20N04S4L08AATMA1 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou IPG20N04S4L08AATMA1

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IPG20N04S4L08AATMA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 8TDSON
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A
RD sou (Max) @ Id, Vgs : 8.2 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 22µA
Chaje Gate (Qg) (Max) @ Vgs : 39nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 3050pF @ 25V
Pouvwa - Max : 54W
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerVDFN
Pake Aparèy Founisè : PG-TDSON-8-10
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IPG20N , IPG20N04S

dokiman pou IPG20N04S4L08AATMA1

pwodwi ki gen rapò pou IPG20N04S4L08AATMA1 Infineon Technologies

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