IRFB33N15DPBF - MOSFET N-CH 150V 33A TO-220AB

Fabricant Nimewo Pati

IRFB33N15DPBF

Entèn Nimewo Pati

AX-IRFB33N15DPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 150V 33A TO-220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

219530 Pieces

referans pri

~~USD 1.278~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFB33N15DPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou IRFB33N15DPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFB33N15DPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 150V 33A TO-220AB

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 150V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 33A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 56 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2020pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.8W (Ta), 170W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFB , IRFB33

dokiman pou IRFB33N15DPBF

Fich : IRFB33N15DPBF.pdf

pwodwi ki gen rapò pou IRFB33N15DPBF Infineon Technologies

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