NVD5867NLT4G - MOSFET N-CH 60V DPAK

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MOSFET N-CH 60V DPAK
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Espesifikasyon pou NVD5867NLT4G

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : NVD5867NLT4G
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V DPAK
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta), 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 39 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 675pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.3W (Ta), 43W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : NVD5 , NVD586

dokiman pou NVD5867NLT4G

pwodwi ki gen rapò pou NVD5867NLT4G ON Semiconductor

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