RJK6025DPD-00#J2 - MOSFET N-CH 600V 1A MP3A

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 600V 1A MP3A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
12968 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RJK6025DPD-00#J2 nan stock pou vann.
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Espesifikasyon pou RJK6025DPD-00#J2

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : RJK6025DPD-00#J2
Fabricant : Renesas Electronics America
Deskripsyon : MOSFET N-CH 600V 1A MP3A
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 17.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 37.5pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 29.7W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : MP-3A
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : RJK60 , RJK6025D

dokiman pou RJK6025DPD-00#J2

pwodwi ki gen rapò pou RJK6025DPD-00#J2 Renesas Electronics America

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