TPCF8101(TE85L,F,M - MOSFET P-CH 12V 6A VS-8

Fabricant Nimewo Pati

TPCF8101(TE85L,F,M

Entèn Nimewo Pati

AX-TPCF8101(TE85L,F,M

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET P-CH 12V 6A VS-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

50910 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TPCF8101(TE85L,F,M nan stock pou vann.

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Espesifikasyon pou TPCF8101(TE85L,F,M

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPCF8101(TE85L,F,M

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET P-CH 12V 6A VS-8

Seri : U-MOSIII

Estati Pati : Discontinued at Digi-Key

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 28 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 1600pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : VS-8 (2.9x1.5)

Pake / Ka : 8-SMD, Flat Lead

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPCF81 , TPCF8101(

dokiman pou TPCF8101(TE85L,F,M

Fich : TPCF8101(TE85L,F,M.pdf

pwodwi ki gen rapò pou TPCF8101(TE85L,F,M Toshiba Semiconductor and Storage

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