VS-10ETF12STRL-M3 - DIODE GEN PURP 1.2KV 10A D2PAK
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE GEN PURP 1.2KV 10A D2PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
398380 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen VS-10ETF12STRL-M3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou VS-10ETF12STRL-M3
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : VS-10ETF12STRL-M3
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.2KV 10A D2PAK
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.33V @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 310ns
Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK
Operating Tanperati - Junction : -40°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou VS-10ETF12STRL-M3
Fich : VS-10ETF12STRL-M3.pdf
pwodwi ki gen rapò pou VS-10ETF12STRL-M3 Vishay Semiconductor Diodes Division
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