H11G2TVM - OPTOISO 4.17KV DARL W/BASE 6DIP

Fabricant Nimewo Pati

H11G2TVM

Entèn Nimewo Pati

AX-H11G2TVM

Fabricant

ON Semiconductor

Kout Deskripsyon

OPTOISO 4.17KV DARL W/BASE 6DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1173265 Pieces

referans pri

~~USD 0.23913~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen H11G2TVM nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou H11G2TVM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : H11G2TVM

Fabricant : ON Semiconductor

Deskripsyon : OPTOISO 4.17KV DARL W/BASE 6DIP

Seri : -

Estati Pati : Active

Kantite chanèl yo : 1

Voltage - Izolasyon : 4170Vrms

Pwopòsyon Transfè Kouran (Min) : 1000% @ 10mA

Pwopòsyon aktyèl transfè (Max) : -

Vire sou / Vire Off Tan (Tip) : 5µs, 100µs

Rise / Fall Time (Tip) : -

Kalite Antre : DC

Kalite Sòti : Darlington with Base

Voltage - Sòti (Max) : 80V

Kouran - Sòti / Chèn : -

Voltage - Forward (Vf) (Tip) : 1.3V

Kouran - DC Forward (Si) (Max) : 60mA

Vce saturation (Max) : 1V

Operating Tanperati : -40°C ~ 100°C

Mounting Kalite : Through Hole

Pake / Ka : 6-DIP (0.400", 10.16mm)

Pake Aparèy Founisè : 6-DIP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : H1 , H11G

dokiman pou H11G2TVM

Fich : H11G2TVM.pdf

pwodwi ki gen rapò pou H11G2TVM ON Semiconductor

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