TPW1R306PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Fabricant Nimewo Pati

TPW1R306PL,L1Q

Entèn Nimewo Pati

AX-TPW1R306PL,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

333995 Pieces

referans pri

~~USD 0.84~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TPW1R306PL,L1Q nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TPW1R306PL,L1Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPW1R306PL,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : X35 PB-F POWER MOSFET TRANSISTOR

Seri : U-MOSIX-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 260A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 91nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 8100pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 960mW (Ta), 170W (Tc)

Operating Tanperati : 175°C

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-DSOP Advance

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPW1 , TPW1R30

dokiman pou TPW1R306PL,L1Q

Fich : TPW1R306PL,L1Q.pdf

pwodwi ki gen rapò pou TPW1R306PL,L1Q Toshiba Semiconductor and Storage

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