HUF76609D3ST - MOSFET N-CH 100V 10A DPAK

Fabricant Nimewo Pati

HUF76609D3ST

Entèn Nimewo Pati

AX-HUF76609D3ST

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 10A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1128335 Pieces

referans pri

~~USD 0.248652~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HUF76609D3ST nan stock pou vann.

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Espesifikasyon pou HUF76609D3ST

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HUF76609D3ST

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 10A DPAK

Seri : UltraFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 160 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 425pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 49W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252AA

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HUF7 , HUF766

dokiman pou HUF76609D3ST

Fich : HUF76609D3ST.pdf

pwodwi ki gen rapò pou HUF76609D3ST ON Semiconductor

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