PMPB215ENEAX - MOSFET N-CH 80V 1.9A SOT1220

Fabricant Nimewo Pati

PMPB215ENEAX

Entèn Nimewo Pati

AX-PMPB215ENEAX

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET N-CH 80V 1.9A SOT1220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2079820 Pieces

referans pri

~~USD 0.134898~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PMPB215ENEAX nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PMPB215ENEAX

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PMPB215ENEAX

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET N-CH 80V 1.9A SOT1220

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 230 mOhm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 2.7V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.2nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 215pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta), 15.6W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DFN2020MD-6

Pake / Ka : 6-UDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PMPB , PMPB21

dokiman pou PMPB215ENEAX

Fich : PMPB215ENEAX.pdf

pwodwi ki gen rapò pou PMPB215ENEAX Nexperia USA Inc.

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