SUD50N03-09P-GE3 - MOSFET N-CH 30V 63A TO252

Fabricant Nimewo Pati

SUD50N03-09P-GE3

Entèn Nimewo Pati

AX-SUD50N03-09P-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 30V 63A TO252

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

11960 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SUD50N03-09P-GE3 nan stock pou vann.

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Espesifikasyon pou SUD50N03-09P-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SUD50N03-09P-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 30V 63A TO252

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 63A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 9.5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2200pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 7.5W (Ta), 65.2W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252, (D-Pak)

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SUD50 , SUD50N03

dokiman pou SUD50N03-09P-GE3

Fich : SUD50N03-09P-GE3.pdf

pwodwi ki gen rapò pou SUD50N03-09P-GE3 Vishay Siliconix

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